Manufacturer | Part # | Datasheet | Description |

Mitsubishi Electric Sem...
|
M5M82C59AFP |
41Kb/1P |
The M5M82C59AFP,-2 is programmable LSI Interupt control |
M5M82C59AP |
1Mb/15P |
The M5M82C59AP,-2 is programmable LSI Interupt control |
M62501P |
96Kb/9P |
PWM IC for the synchronized deflection system control |
M62502FP |
83Kb/7P |
PWM IC for the synchronized deflection system control |
M52358VP |
843Kb/15P |
The M52358VP was developed for use with PAL-system VCRs |
M57115L-01 |
45Kb/3P |
THE POWER SUPPLY DC-DC CONVERTER FOR IGBT MODULE GATE DRIVE |
M61508FP |
3Mb/22P |
THE ELECTRIC VOLUME of BUILD-IN NON FADER VOLUME with TONE CONTROL |
FU-319SPA-CV6 |
48Kb/3P |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
BA01232 |
19Kb/1P |
The BA01232 is GaAs RF amplifier designed for W-CDMA hand-held phone |
FU-311SPP-CV3 |
49Kb/3P |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
FU-319SPP-CV6 |
38Kb/3P |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
319SPA-X6M20 |
39Kb/4P |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
FU-311SPP-CV4 |
50Kb/3P |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
FU-319SPA-C6 |
39Kb/3P |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
FU-319SPP-C6 |
37Kb/3P |
InGaAs PD PREAMP MODULE FOR THE 1.31 mm AND 1.55 mm WAVELENGTH RANGE |
M50752-PGYS |
257Kb/5P |
The M50752-PGYS is an EPROM mounted-type microcomputer employing a silicon gate CMOS process and was designed for developing programs for single-chip |
M50753-PGYS |
288Kb/6P |
The M50753-PGYS is an EPROM mounted-type microcomputer employing a silicon gate CMOS process and was designed for developing programs for single-chip |