GAAS Datasheet(PDF) - TSUS4300_15 - Vishay Siliconix

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GAAS Datasheet, PDF

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Searched Keyword : 'GAAS' - Total: 107 (1/6) Pages

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	TSUS4300	110Kb/5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 1.9, 20-Oct-15
	TSKS5400	144Kb/5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 2.4, 03-Sep-13
	CQY37N	281Kb/5P	Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2022
	CQY37N	278Kb/5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 1.7, 08-Mar-11
	TSUS3400	108Kb/5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 1.5, 25-Aug-11
	TSUS5400	111Kb/5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 1.8, 24-Aug-11
	TSSS2600	108Kb/5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 1.7, 24-Aug-11
	TSUS6402	108Kb/5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 1.0, 28-May-15
	TSUS5402	118Kb/5P	Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2021
	TSUS5200	112Kb/5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 2.2, 29-Jun-09
	TSUS6202	109Kb/5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 1.0, 29-Sep-15
	TSUS5200	109Kb/5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 2.3, 24-Aug-11
	TSUS4400	113Kb/5P	Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2021
	TSUS5400	112Kb/5P	Infrared Emitting Diode, 950 nm, GaAs Rev. 1.7, 25-Jun-09
	VSMS3700	141Kb/7P	Infrared Emitting Diode, 950 nm, GaAs Rev. 1.3, 03-Nov-09
	TSSS2600	107Kb/5P	Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2022
	VSMS3700	149Kb/8P	Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2022
	CQY37N	280Kb/5P	Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2023
	TSSS2600	106Kb/5P	Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2023
	TSUS520	119Kb/7P	Infrared Emitting Diode, 950 nm, GaAs Rev. 2.0, 23-Feb-07

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What is GAAS

GaAs (gallium arsenide) is a semiconductor material composed of gallium (Ga) and arsenic (As), and is used in electronic components.

GaAs is widely used in optoelectronic devices, high-speed integrated circuits (ICs), and microwave devices.

GaAs has very high electron mobility and fast electron movement speed, so it plays an important role in high-frequency signal processing and optical communication.

These properties make GaAs one of the key materials for high-speed electronics.

GaAs is also used in the manufacture of ultra-high-speed computer chips because it generally retains its excellent electrical properties even at cryogenic temperatures.

Compared to traditional semiconductor materials such as Si (silicon), GaAs is relatively expensive and the manufacturing process is complicated.

However, GaAs is still recognized as an important semiconductor material because it offers excellent electrical properties and performance required in high-speed electronics.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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