Manufacturer | Part # | Datasheet | Description |

Infineon Technologies A...
|
BSC004NE2LS5 |
2Mb/12P |
OptiMOS5 Power-Transistor, 25 V Rev.2.1, 2021-03-08 |
BSC010NE2LSI |
1Mb/12P |
OptiMOSTM Power-MOSFET, 25 V Rev.2.4,2016-01-29 |
BSZ011NE2LS5I |
1Mb/11P |
OptiMOSTM5 Power-Transistor, 25 V Rev.2.1,2020-10-23 |
BSZ009NE2LS5 |
1Mb/11P |
OptiMOSTM 5 Power-Transistor, 25 V Rev.2.1,2020-05-12 |
IQE006NE2LM5 |
1Mb/13P |
OptiMOSTM 5 Power-Transistor, 25 V Rev.2.1,2020-03-16 |
BSZ010NE2LS5 |
1Mb/11P |
OptiMOSTM 5 Power-Transistor, 25 V Rev.2.2,2020-05-12 |
IQE006NE2LM5CG |
1Mb/13P |
OptiMOSTM 5 Power-Transistor, 25 V Rev.2.1,2020-03-16 |
BGA427 |
58Kb/5P |
Si-MMIC-Amplifier in SIEGET 25-Technologie Aug-02-2001 |
IR3447A |
1Mb/40P |
25 A single-voltage synchronous Buck regulator V 2.4 2021-11-19 |
IQE006NE2LM5SC |
1Mb/13P |
MOSFET OptiMOSTM 5 Power-Transistor, 25 V Rev. 2.0, 2022-04-28 |
IQDH29NE2LM5CG |
1Mb/11P |
MOSFET OptiMOSTM 5 Power-Transistor, 25 V Rev. 2.1, 2023-03-29 |
BGA420 |
166Kb/8P |
Si-MMIC-Amplifier in SIEGET 25-Technologie 2007-07-12 |
BGA420E6327 |
553Kb/8P |
Si-MMIC-Amplifier in SIEGET 25-Technologie 2011-07-26 |
BGA420 |
139Kb/6P |
Si-MMIC-Amplifier in SIEGET 25-Technologie Jan-29-2002 |
BGA427H6327XTSA1 |
548Kb/7P |
Si-MMIC-Amplifier in SIEGET 25-Technologie 2011-09-15 |
TDA38827 |
2Mb/48P |
25 A single-voltage synchronous Buck regulator V2.3 2021-7-19 |
IQE006NE2LM5CGSC |
1Mb/13P |
MOSFET OptiMOSTM 5 Power-Transistor, 25 V Rev. 2.0, 2022-04-28 |
BGA427 |
165Kb/7P |
Si-MMIC-Amplifier in SIEGET 25-Technologie 2007-07-12 |
BTS5241L |
293Kb/28P |
Smart High-Side Power Switch PROFET Two Channels, 25 mΩ V1.0, 2004-02-27 |
PTFC260202FC |
870Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 ??2690 MHz Rev. 03.3, 2016-06-21 |