Manufacturer | Part # | Datasheet | Description |

Siemens Semiconductor G...
|
BGA420 |
38Kb/6P |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 廓-gain block Unconditionally stable) |
BGA427 |
35Kb/5P |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
BBY33DA-2 |
20Kb/2P |
Silicon Tuning Varactor (Abrupt junction tuning diode Tuning range 25 V High figure of merit) |
BGA425 |
81Kb/8P |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 廓 block LNA / MIX Unconditionally stable) |
BAT30 |
247Kb/2P |
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz) |
MPD2545 |
438Kb/10P |
25 4-character, 5x7 dot matrix, X-Y stackable, HI-REL/Military Alphanumeric Programmable Display with Built-In CMOS Control Functions |
3SE6604-2BA |
267Kb/3P |
magnetically-operated switch, contact block, large, 25 x 88 mm, 2 NC connection cable 3 m LIYY 4 x 0.25 mm2 required solenoid 3SE6704-2BA or with increased operating distance 3SE6701-2BA 10/20/2023 |