| Manufacturer | Part # | Datasheet | Description |

Renesas Technology Corp
|
RJK03P7DPA |
259Kb/11P |
MOS2 30 V, 30 A, 5.3 m max. High Speed Power Switching |
| HM628100I |
114Kb/19P |
Wide Temperature Range Version 8 M SRAM (1024-kword 쨈 8-bit) |
| HM62V16514I |
97Kb/19P |
Wide Temperature Range Version 8 M SRAM (512-kword x 16-bit) |
| HM6216514I |
121Kb/20P |
Wide Temperature Range Version 8 M SRAM (512-kword 쨈 16-bit) |
| HM62A16100I |
243Kb/19P |
Wide Temperature Range Version 16 M SRAM (1-Mword 횞 16-bit) |
| HM62V16100I |
211Kb/25P |
Wide Temperature Range Version 16 M SRAM (1-Mword 횞 16-bit) |
| R1LV1616HBG-I |
121Kb/15P |
Wide Temperature Range Version 16 M SRAM (1-Mword 횞 16-bit) |
| HM62A16100I |
140Kb/17P |
Wide Temperature Range Version 16 M SRAM (1-Mword 횞 16-bit) |
| HM628512CI |
109Kb/19P |
Wide Temperature Range Version 4 M SRAM (512-kword 쨈 8-bit) |
| HM628100I |
91Kb/17P |
Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit) |
| R1LV1616HBGI |
143Kb/17P |
Wide Temperature Range Version 16 M SRAM (1-Mword 횞 16-bit) |
| RA6M1 |
1Mb/92P |
Armv7E-M architecture with DSP instruction set Maximum operating frequency: 120 MHz |
| HM62V16256CI |
100Kb/20P |
Wide Temperature Range Version 4 M SRAM (256-kword 쨈 16-bit) |
| HM6216514I |
98Kb/18P |
Wide Temperature Range Version 8 M SRAM (512-kword x 16-bit) |
| HM62V16512I |
97Kb/19P |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM (512-KWORD X 16-BIT) |
| HM62V8100L |
110Kb/21P |
Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit) |
| RJK0855DPB |
155Kb/7P |
80V, 30A, 11 m max. Silicon N Channel Power MOS FET Power Switching |
| PL10724EJ01V0DS |
201Kb/9P |
? 30 關m InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC |
| RJK0854DPB |
137Kb/7P |
80V, 25A, 13 m max. Silicon N Channel Power MOS FET Power Switching |
| R1LV1616HSA-I |
477Kb/21P |
16 M SRAM (1-Mword x 16-bit / 2-Mword x 8-bit) |