| Manufacturer | Part # | Datasheet | Description |
STMicroelectronics
|
STL11N4LLF5 |
1Mb/14P |
N-channel 40 V, 9.1 m typ., 15 A STripFETV Power MOSFET in a PowerFLAT 3.3 x 3.3 package |
| STG200G65FD8AG |
505Kb/11P |
Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing
Rev 1 - July 2023 |
| STI300N4F6 |
782Kb/13P |
N-channel 40 V, 1.7 m廓 typ., 160 A, STripFET??VI DeepGATE??Power MOSFET in a I짼PAK package
February 2013 Rev 2 |
| STH140N8F7-2 |
772Kb/15P |
N-channel 80 V, 3.3 m廓 typ., 90 A STripFET??F7 Power MOSFET in a H2PAK-2 package
October 2014 Rev 2 |
| STL9P3LLH6 |
628Kb/14P |
P-channel -30 V, 12 m廓 typ., -9 A STripFET??H6 Power MOSFET in a PowerFLAT??3.3x3.3 package
March 2016 Rev 2 |
| STP80N240K6 |
259Kb/13P |
N-channel 800 V, 197 m廓 typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package
February 2022 |
| STO36N60M6 |
1Mb/15P |
N-channel 600 V, 85 m廓 typ., 30 A, MDmesh M6 Power MOSFET in a TO?멛L package
May 2021 |
| A2P75S12M3 |
709Kb/13P |
ACEPACKTM 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC
January 2019 Rev 6 |
| STD134N4F7AG |
786Kb/16P |
Automotive-grade N-channel 40 V, 2.5 m typ., 80 A STripFETTM F7 Power MOSFET in a DPAK package
December 2016 Rev 1 |
| STD170N4F7AG |
783Kb/16P |
Automotive-grade N-channel 40 V, 2.2 m typ., 80 A STripFETTM F7 Power MOSFET in a DPAK package
December 2016 Rev 1 |
| STI24N60M6 |
252Kb/13P |
N-channel 600 V, 162 m typ., 17 A, MDmesh™ M6 Power MOSFET in an I²PAK package
August 2018 Rev 1 |
| STL19N60M6 |
575Kb/14P |
N-channel 600 V, 255 m typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package
December 2019 Rev 1 |
| STH320N4F6-2 |
1Mb/19P |
N-channel 40 V, 1.1 m廓 typ., 200 A, H짼PAK-2, H짼PAK-6 STripFET??VI DeepGATE??Power MOSFET
February 2013 Rev 1 |
| STL140N6F7 |
944Kb/13P |
N-channel 60 V, 2.4 m廓 typ., 140 A STripFET??F7 Power MOSFET in a PowerFLAT??5x6 package
April 2017 Rev 5 |
| STL62P3LLH6 |
1Mb/16P |
P-channel -30 V, 9 m廓 typ., -62 A STripFET??H6 Power MOSFET in a PowerFLAT 5x6 package
October 2016 Rev 6 |
| SCTH90N65G2V-7 |
618Kb/14P |
Silicon carbide Power MOSFET 650 V, 116 A, 18 m廓 (typ., TJ = 25 째C) in an H짼PAK?? package
Rev 4 - July 2019 |
| STO65N60DM6 |
1Mb/15P |
N?멵hannel 600 V, 67 m廓 typ., 46 A MDmesh DM6 Power MOSFET in a TO?멛L package
Rev 1 - March 2021 |
| STF26N60DM6 |
280Kb/12P |
N-channel 600 V, 165 m廓 typ., 18 A, MDmesh DM6 Power MOSFET in a TO??20FP package
September 2020 |
| STGYA50M120DF3 |
2Mb/15P |
Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package
October 2021 Rev 2 |
| A2P75S12M3-F |
868Kb/14P |
ACEPACKTM 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC
January 2019 Rev 5 |
English ▼ 
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
