NBC-M 8FS-R4AC/.../... - NETWORK CABLE Datasheet(PDF) - STL75N8LF6

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	STL75N8LF6	797Kb/16P	N-channel 80 V, 5.6 m廓, 18 A, PowerFLAT??5x6 STripFET??VI DeepGATE??Power MOSFET November 2011 Rev 3
	UM1900	1Mb/19P	Getting started with the digital MEMS microphones expansion board based on MP34DT01-M for STM32 Nucleo July 2016 Rev 3
	STP210N75F6	693Kb/13P	N-channel 75 V, 3 m廓, 120 A TO-220 STripFET??VI DeepGATE??Power MOSFET
	STB200N6F3	858Kb/16P	N-channel 60 V, 3 m廓, 120 A D2PAK, TO-220, I2PAK STripFET??Power MOSFET
	STH400N4F6-2	794Kb/18P	Automotive-grade N-channel 40 V, 0.85 m??typ.,180 A STripFET??VI DeepGATE??Power MOSFETs February 2014 Rev 2
	SCTH70N120G2V-7	378Kb/14P	Silicon carbide Power MOSFET 1200 V, 21 m廓 typ., 90 A in an H짼PAK?? package Rev 2 - May 2021
	SCTW40N120G2V	205Kb/12P	Silicon carbide Power MOSFET 1200 V, 62 m廓 typ., 36 A in an HiP247 package Rev 2 - June 2021
	STV0370	68Kb/2P	Terrestrial (ATSC), cable (ITU-T J83B) and out-of-band digital receivers
	STIH223	85Kb/4P	HD cable STB processor with integrated demodulator and low power standby controller
	STG35M120F3D7	184Kb/9P	1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing DS12463 - Rev 1 - February 2018
	STG15M120F3D7	263Kb/10P	Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing Rev 3 - August 2022
	STB100N6F7	555Kb/15P	N-channel 60 V, 4.7 m??typ.,100 A STripFET??F7 Power MOSFET in a D짼PAK package January 2015 Rev 2
	STGF10M65DF2	989Kb/17P	Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package April 2017
	SCTH35N65G2V-7	378Kb/15P	Silicon carbide Power MOSFET 650 V, 55 m廓 typ., 45 A in an H2PAK-7 package Rev 5 - December 2020
	STP200N3LL	681Kb/13P	N-channel 30 V, 2.15 m(ohm) typ., 120 A Power MOSFET in a TO-220 package July 2016 Rev 2
	STG15M120F3D8	224Kb/8P	1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing Rev 1 - January 2022
	STG50M120F3D7	243Kb/10P	Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing Rev 2 - August 2022
	SCTWA90N65G2V	249Kb/12P	Silicon carbide Power MOSFET 650 V, 119 A, 18 m廓 in an HiP247 long leads package Rev 2 - August 2020
	STB24N60M6	445Kb/16P	N-channel 600 V, 162 m廓 typ., 17 A, MDmesh??M6 Power MOSFET in a D짼PAK Rev 1 - August 2018
	STD18N60M6	534Kb/16P	N-channel 600 V, 230 m typ., 13 A, MDmesh M6 Power MOSFET in a DPAK package April 2019 Rev 2

NBC-M 8FS-R4AC/.../... - NETWORK CABLE Datasheet, PDF

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