| Manufacturer | Part # | Datasheet | Description |

Toshiba Semiconductor
|
TPC8403 |
309Kb/11P |
Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) |
| TPC8003 |
499Kb/7P |
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| TPC8203 |
419Kb/7P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| SSM3K14T |
184Kb/6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| TPC6002 |
158Kb/6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| TPC8305 |
520Kb/7P |
Silicon P Channel MOS Type (U-MOSII) |
| TPC8206 |
223Kb/7P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| 2SK3442 |
207Kb/6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| 2SK3441 |
233Kb/6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| TPC6201 |
166Kb/6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| TPC8204 |
342Kb/7P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| SSM6K08FU |
160Kb/6P |
CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category |
| SSM5H01TU |
213Kb/10P |
Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode |
| TPC8401 |
750Kb/11P |
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII) |
| TPC8402 |
719Kb/11P |
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U-MOSII) |
| SSM3J13T |
205Kb/6P |
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) |
| TPC8303 |
520Kb/7P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) |
| SSM6J08FU |
162Kb/6P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) |
| SSM3J13T |
182Kb/6P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) |
| SSM3J14T |
179Kb/6P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) |