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REPRESENTS Datasheet, PDF |
| Searched Keyword : 'REPRESENTS' - Total: 25 (1/2) Pages |
| Manufacturer | Part # | Datasheet | Description |
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Samtec, Inc |
ASP-149118-01 | 246Kb/2P |
REPRESENTS A CRITICAL DIMENSION |
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Analog Devices |
ADUC845_847_848ANOMALY | 100Kb/4P |
This anomaly list represents the known bugs |
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Infineon Technologies A... |
IDH04G65C5 | 1Mb/13P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
| IDH05G65C5 | 1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
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| IDW40G65C5 | 1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15 |
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| IDH20G65C5 | 1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
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| IDW12G65C5 | 1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15 |
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| IDW16G65C5 | 1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15 |
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PHOENIX CONTACT |
2688394 | 118Kb/8P |
The bus coupler represents the link between an EtherNet/IP??network and the Axioline F system. |
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Infineon Technologies A... |
IDH03G65C5 | 1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
| IDH06G65C5 | 1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
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| IDH08G65C5 | 1Mb/13P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
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| IDH16G65C5 | 1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
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| IDW30G65C5 | 1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15 |
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| IDH09G65C5 | 1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
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| IDH10G65C5 | 1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
|
| IDW10G65C5 | 1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15 |
|
| IDW20G65C5 | 1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15 |
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SL Power Electronics |
GNT60 | 122Kb/2P |
GNT60-X-YYYG, where X = 12, 15, 18, 24 or 48 which represents the output voltage rating, -YYY is value added options not related to Safety and G represents ROHS Compliance |
| G2M65 | 113Kb/2P |
G2M65-X, where X is any number from 12 through 48, which represents the output voltage rating. |
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