PRODUCED Datasheet(PDF) - 9162-200

Manufacturer	Part #	Datasheet	Description
AVX Corporation	9162-200	1Mb/4P	Produced for use with mini SIM cards.
List of Unclassifed Man...	SHIELD-EKG-EMG	3Mb/20P	nullAll boards produced by Olimex LTD are ROHS compliant 2014
List of Unclassifed Man...	SW2N60	510Kb/6P	This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN.
DONGGUAN YOU FENG WEI E...	ESD8D3.3C	958Kb/4P	ESD8D3.3C is a bidirectional low capacitance electrostatic discharge protector produced by advanced silicon circuit technology
Advanced XTAL Products	AXIOM35HR	185Kb/4P	High Stability VHF Very Low Power OCXO Produced in association with Magic Xtal ??Model MXO37H/R
Samsung semiconductor	RC1608J275CS	5Mb/40P	We, Samsung, declare that our component Chip Resistor is produced in accordance with EU RoHS directive.
Samsung semiconductor	RC1608J515CS	5Mb/40P	We, Samsung, declare that our component Chip Resistor is produced in accordance with EU RoHS directive.
Shenzhen Huazhimei Semi...	HM1P10MR	763Kb/5P	P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Fairchild Semiconductor	FDPF10N60NZ	439Kb/10P	These N-Channel enhancement mode power field effect transistors are produced using Fairchild?셲 proprietary, planar stripe, DMOS technology.
Stanson Technology	STP9434	314Kb/6P	STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Fairchild Semiconductor	FQD6N50C	687Kb/9P	These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
Stanson Technology	ST2318SRG	221Kb/7P	ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STP4403	321Kb/6P	STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	ST2319SRG	229Kb/8P	ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STP9235	331Kb/6P	STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	ST3407SRG	184Kb/6P	ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4416	966Kb/6P	STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN6303	705Kb/6P	STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN6335	843Kb/6P	STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4407	545Kb/6P	The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

PRODUCED Datasheet, PDF

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