| Manufacturer | Part # | Datasheet | Description |
Hamamatsu Corporation
|
S12028_KPIN1083E01 |
575Kb/3P |
Enhanced near IR sensitivity, using a MEMS |
AVAGO TECHNOLOGIES LIMI...
|
SFH551-1 |
84Kb/5P |
Sensitive in visible and near IR range |
List of Unclassifed Man...
|
VTT7222H |
275Kb/3P |
Low-cost visible and near-IR photodetection |
Hamamatsu Corporation
|
S9251 |
75Kb/2P |
Si APD High sensitivity in near IR range |
| S11519 |
571Kb/4P |
Enhanced near IR sensitivity, using a MEMS technology |
| S1336 |
232Kb/4P |
Si photodiode UV to near IR for precision photometry |
| S11499 |
429Kb/3P |
Large area, enhanced near IR sensitivity, using a MEMS technology |
3M Electronics
|
IR900 |
26Kb/1P |
Reflects near IR heat with minimal reduction of visible light transmission |
Hamamatsu Corporation
|
S9972 |
458Kb/10P |
CCD area image sensor Front-illuminated FFT-CCD, high near IR sensitivity |
Marktech Corporate
|
MT5720-IR |
595Kb/2P |
Near Infrared LED |
| MT5720-IR |
595Kb/2P |
Near Infrared LED |
ams AG
|
AS7263 |
956Kb/45P |
6 near-IR channels: 610nm, 680nm, 730nm, 760nm, 810nm and 860nm, each with 20nm FWHM |
Hamamatsu Corporation
|
S1722-02 |
96Kb/2P |
Si PIN photodiode Large area, high-speed PIN photodiodes for UV to near IR photometry |
| S2592 |
132Kb/4P |
Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR |
Texas Instruments
|
DLP4500NIR |
2Mb/58P |
WXGA Near-Infared DMD |
STMicroelectronics
|
ST25R95 |
874Kb/61P |
Near field communication transceiver
April 2019 |
Rohm
|
SJ3002-EC60A |
78Kb/5P |
Near edge thermal Printhead |
STMicroelectronics
|
ST21NFCA |
263Kb/6P |
Near field communication microcontroller |
Willow Technologies Ltd
|
USR4-1410 |
122Kb/2P |
Highest Stability Near Temperature Independency |
| USR4-T220 |
311Kb/2P |
Highest Stability Near Temperature Independent |
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