| Electronic Components Datasheet Search |
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MINIMIZE Datasheet, PDF |
| Searched Keyword : 'MINIMIZE' - Total: 38 (1/2) Pages |
| Manufacturer | Part # | Datasheet | Description |
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Mill-Max Mfg. Corp. |
811 | 2Mb/11P |
Mill-Max Spring-loaded Connectors Minimize Noise |
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SynQor Worldwide Headqu... |
MCOTS-F-28-T-HT | 6Mb/14P |
Standby circuitry to minimize quiescent power draw |
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STMicroelectronics |
AN1049 | 282Kb/24P |
MINIMIZE POWER LOSSES OF LIGHTLY LOADED FLYBACK |
| AN1014 | 258Kb/25P |
HOW TO MINIMIZE THE ST7 POWER CONSUMPTION | |
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MERITEK ELECTRONICS COR... |
OP | 117Kb/1P |
Minimize the short curcuit probability due to flex cracks |
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Lumileds Lighting Compa... |
AB06 | 1Mb/12P |
Circuit Design and Layout Practices to Minimize Electrical Stress |
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SHENZHEN DOINGTER SEMIC... |
UPA2820T1S | 1Mb/5P |
N-Channel MOSFET uses advanced SGT to minimize on-state resistance |
| ZC004TG | 1Mb/4P |
N-Channel MOSFET uses advanced SGT to minimize on-state reistance | |
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Lumileds Lighting Compa... |
AB188 | 1Mb/8P |
Circuit Design and Layout Practices to Minimize Electrical Stress |
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SHENZHEN DOINGTER SEMIC... |
AON7534 | 884Kb/6P |
N-Channel MOSFET uses advanced SGT to minimize on-state resistance |
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Maxim Integrated Produc... |
MAX20034EVKIT | 1Mb/8P |
Dual High-Voltage Step-Down Controllers to Minimize Board-Area Occupancy Rev 0; 11/17 |
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STMicroelectronics |
AN4671 | 572Kb/17P |
How to fine tune your SiC MOSFET gate driver to minimize losses |
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SHENZHEN DOINGTER SEMIC... |
MTB4D0N03BV8 | 2Mb/5P |
N-Channel MOSFET uses advanced SGT to minimize on-state resistance |
| TPCC8062-H | 2Mb/5P |
N-Channel MOSFET uses advanced trench SGT to minimize on-state resistance | |
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Stanson Technology |
ST002 | 721Kb/7P |
This high-density process is especially tailored to minimize on-state resistance |
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Level One |
POI-2002 | 634Kb/3P |
Minimize the need for a bulky power adapter and power line |
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SHENZHEN DOINGTER SEMIC... |
ZC005TG | 1Mb/5P |
N-Channel MOSFET uses advanced SGT to minimize on-state reistance |
| SIS456DN | 1Mb/5P |
N-Channel MOSFET uses advanced SGT to minimize on-state reistance | |
| WSD3066DN | 2Mb/5P |
N-Channel MOSFET uses advanced SGT to minimize on-state resistance | |
| TPN11003NL | 1Mb/4P |
N-Channel MOSFET uses advanced trench technology to minimize on-state resistance |
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