| Manufacturer | Part # | Datasheet | Description |

Integrated Silicon Solu...
|
IS42S83200A |
917Kb/49P |
256 Mb Synchronous DRAM |
| IS42S83200C |
1Mb/40P |
256 Mb Single Data Rate Synchronous DRAM |
| IS45S83200C |
1Mb/40P |
256 Mb Single Data Rate Synchronous DRAM |

AAEON Technology
|
PFM-541I |
368Kb/2P |
Onboard DDR 333 MHz Memory 256 MB |

Cypress Semiconductor
|
S79FL256S |
2Mb/111P |
256 Mbit (32 MB)/512 Mbit (64 MB), 3 V, Dual-Quad SPI Flash |

Austin Semiconductor
|
AS4SD16M16 |
1Mb/51P |
256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory |
| AS4SD16M16 |
2Mb/52P |
256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory |

ON Semiconductor
|
CAT24M01 |
178Kb/14P |
1 Mb I2C CMOS Serial EEPROM 256?묪yte Page Write Buffer May, 2011 ??Rev. 1 |

Maxwell Technologies
|
48SD3208 |
589Kb/39P |
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks |

National Instruments Co...
|
PXI-5670 |
562Kb/5P |
250 kHz to 2.7 GHz/8, 32 or 256 MB memory |

Maxwell Technologies
|
48SD1616 |
596Kb/42P |
256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks |
| 48SD6404 |
596Kb/42P |
256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks |

Mosel Vitelic, Corp
|
V826632G24S |
213Kb/14P |
256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64 |
| V826632B24S |
217Kb/14P |
256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64 |

Cypress Semiconductor
|
S72XS-R |
394Kb/7P |
256 Mb (16M x 16 bit), 1.8V MirrorBit짰 Flash and DDR DRAM |

Infineon Technologies A...
|
S80KS2562 |
1Mb/54P |
256 Mb: HYPERRAM??self-refresh dynamic RAM (DRAM) with HYPERBUS??interface 1.8 V 002-31337 Rev. *C |
| S80KS2563 |
877Kb/53P |
256 Mb: HYPERRAM??self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V 002-31339 Rev. *C |

Cypress Semiconductor
|
CYD18S36V18 |
63Kb/2P |
18-Mb/9-Mb/4-Mb x36/x18 FullFlex??Dual-Ports |

Numonyx B.V
|
M58LT256JST |
1Mb/108P |
256 Mbit (16 Mb 횞 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories |

STMicroelectronics
|
M58LT256JST |
836Kb/106P |
256 Mbit (16 Mb 횞 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories |