| Manufacturer | Part # | Datasheet | Description |
STMicroelectronics
|
SCTWA90N65G2V-4 |
239Kb/13P |
Silicon carbide Power MOSFET 650 V, 18 m廓 typ., 119 A in an HiP247-4 package
Rev 1 - November 2020 |
| SCTW40N120G2V |
205Kb/12P |
Silicon carbide Power MOSFET 1200 V, 62 m廓 typ., 36 A in an HiP247 package
Rev 2 - June 2021 |
| SCTWA60N120G2AG |
242Kb/12P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
Rev 1 - December 2020 |
| SCTWA90N65G2V |
249Kb/12P |
Silicon carbide Power MOSFET 650 V, 119 A, 18 m廓 in an HiP247 long leads package
Rev 2 - August 2020 |
| SCTW90N65G2V |
402Kb/12P |
Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package
DS11832 - Rev 5 - July 2019 |
| SCT10N120AG |
238Kb/14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
Rev 3 - September 2022 |
| SCTW100N65G2AG |
423Kb/11P |
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package
DS11643 - Rev 2 - November 2018 |
| SCTW40N120G2VAG |
210Kb/12P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 m廓 (typ., TJ = 25 째C) in an HiP247 package
Rev 3 - November 2020 |
| SCTWA40N120G2AG |
257Kb/12P |
Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
Rev 4 - November 2021 |
| SCTW35N65G2VAG |
206Kb/12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
Rev 3 - September 2020 |
| SCTW60N120G2AG |
197Kb/11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
Rev 1 - May 2020 |
| SCTW100N120G2AG |
217Kb/11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
Rev 4 - July 2020 |
| SCT20N120AG |
487Kb/13P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 m廓 (typ., TJ=150 째C), in an HiP247 package
Rev 3 - October 2019 |
| SCTWA35N65G2VAG |
243Kb/12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package
Rev 1 - August 2020 |
PHOENIX CONTACT
|
3030132 |
63Kb/2P |
FBS 4-4 |
| 3024834 |
58Kb/2P |
FBSTB 4-4 |
| 3060144 |
94Kb/5P |
UP 4/ 4 |
| 3045839 |
254Kb/13P |
Plug - UPBV 4/ 4
02/04/2022 |
| 1681004 |
167Kb/6P |
SACB-4/ 4-SC |
| 3001569 |
68Kb/2P |
FBRN 4-4 N |
English ▼ 
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
