HIP247 Datasheet(PDF) - SCTW40N120G2V

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	SCTW40N120G2V	205Kb/12P	Silicon carbide Power MOSFET 1200 V, 62 m廓 typ., 36 A in an HiP247 package Rev 2 - June 2021
	SCTWA60N120G2AG	242Kb/12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package Rev 1 - December 2020
	SCTWA90N65G2V-4	239Kb/13P	Silicon carbide Power MOSFET 650 V, 18 m廓 typ., 119 A in an HiP247-4 package Rev 1 - November 2020
	SCTWA90N65G2V	249Kb/12P	Silicon carbide Power MOSFET 650 V, 119 A, 18 m廓 in an HiP247 long leads package Rev 2 - August 2020
	SCTW90N65G2V	402Kb/12P	Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package DS11832 - Rev 5 - July 2019
	SCT10N120AG	238Kb/14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package Rev 3 - September 2022
	SCTW100N65G2AG	423Kb/11P	Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package DS11643 - Rev 2 - November 2018
	SCTW40N120G2VAG	210Kb/12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 m廓 (typ., TJ = 25 째C) in an HiP247 package Rev 3 - November 2020
	SCTWA40N120G2AG	257Kb/12P	Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package Rev 4 - November 2021
	SCTW35N65G2VAG	206Kb/12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package Rev 3 - September 2020
	SCTW60N120G2AG	197Kb/11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package Rev 1 - May 2020
	SCTW100N120G2AG	217Kb/11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package Rev 4 - July 2020
	SCT20N120AG	487Kb/13P	Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 m廓 (typ., TJ=150 째C), in an HiP247 package Rev 3 - October 2019
	SCTWA35N65G2VAG	243Kb/12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package Rev 1 - August 2020

HIP247 Datasheet, PDF

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