| Manufacturer | Part # | Datasheet | Description |

Megawin Technology Co.,...
|
MG64F225 |
1Mb/68P |
Flash write/erase cycle |
| MG64F237 |
1Mb/68P |
Flash write/erase cycle |

ATMEL Corporation
|
ATMEGA128A |
7Mb/386P |
Write/Erase cycles: 10,000 Flash/100,000 EEPROM |

Integrated Silicon Solu...
|
IS61C256 |
319Kb/6P |
WRITE CYCLE SWITCHING CHARACTERISTICS |
| IS61LPS51236B |
1Mb/33P |
Internal self-timed write cycle |

ATMEL Corporation
|
AT28C17 |
201Kb/12P |
Self-Timed Byte Write Cycle |

Micross Components
|
AS5SS256K36 |
798Kb/17P |
Internally self-timed WRITE cycle |
| AS5SS256K18 |
644Kb/14P |
Interally self-timed WRITE cycle |

ATMEL Corporation
|
AT28C16 |
179Kb/12P |
Self-Timed Byte Write Cycle |

Winbond
|
W19B160BTT7H |
542Kb/47P |
2.7~3.6-volt write (program and erase) operations, Fast write operation |
| W19B320BT |
661Kb/56P |
2.7~3.6-volt write (program and erase) operations |

Maxim Integrated Produc...
|
DS24B33 |
243Kb/22P |
4Kb 1-Wire EEPROM with 200k Write/Erase Cycles Rev 0; 2/11 |

ATMEL Corporation
|
TK5561A-PP |
252Kb/10P |
READ/WRITE CRYPTO TRANSPONDER FOR SHORT CYCLE TIME |

STMicroelectronics
|
M28F256 |
715Kb/20P |
256K(32K x8, Chip Erase)FLASH MEMORY |

Renesas Technology Corp
|
M5M29KB |
285Kb/32P |
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |

Dialog Semiconductor
|
AT25PE16 |
922Kb/63P |
16-Mbit DataFlash-L Page Erase Serial Flash Memory |

Renesas Technology Corp
|
AT25PE20 |
2Mb/63P |
2-Mbit DataFlash-L Page Erase Serial Flash Memory 2/2022 |

ATMEL Corporation
|
AT89C51CC03 |
327Kb/7P |
Read/Write Flash and EEPROM Memories |
| T89C51CC01 |
346Kb/32P |
Read/Write Flash and EEPROM Memories |

Texas Instruments
|
TMS29F040 |
480Kb/37P |
Erase-Suspend/Erase-Resume Operation |