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FIELDEFFECT Datasheet, PDF |
| Searched Keyword : 'FIELDEFFECT' - Total: 20 (1/1) Pages |
| Manufacturer | Part # | Datasheet | Description |
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Renesas Technology Corp |
NE321000 | 215Kb/14P |
HETERO JUNCTION FIELDEFFECT TRANSISTOR 1999 |
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Vishay Siliconix |
S525T-GS08 | 201Kb/7P |
N-Channel MOS-Fieldeffect Triode, Depletion Mode Rev. 1.6, 08-Sep-08 |
| S525T | 200Kb/7P |
N-Channel MOS-Fieldeffect Triode, Depletion Mode Rev. 1.6, 08-Sep-08 |
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| BF543 | 157Kb/3P |
N-Channel MOS-Fieldeffect Triode, Depletion Mode Rev. 1.5, 05-Jul-05 |
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| BF996S | 133Kb/8P |
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99 |
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Vishay Telefunken |
BF960 | 570Kb/10P |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE |
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Vishay Siliconix |
BF994S | 119Kb/7P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99 |
| BF966SA | 161Kb/8P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 15-Apr-05 |
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| BF995 | 116Kb/7P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99 |
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| BF961 | 160Kb/7P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 25-Nov-04 |
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Vishay Telefunken |
BF966 | 396Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode - Depletion Mode |
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Vishay Siliconix |
BF964S | 127Kb/8P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99 |
| BF988 | 139Kb/8P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 08-Jul-99 |
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| BF998 | 155Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99 |
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| BF998 | 318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08 |
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| BF988 | 157Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.7, 11-Sep-08 |
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TEMIC Semiconductors |
BF996S | 68Kb/5P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
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Vishay Siliconix |
BF966S | 127Kb/8P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99 |
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New Jersey Semi-Conduct... |
BF961 | 95Kb/2P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
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SHIKUES Electronics |
SDW2065 | 963Kb/5P |
These dual N Channel enhancement mode power fieldeffect transistors are using trench DMOS technology. |
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