FETS Datasheet(PDF) - LBSS8402DW1T1G

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What is FETS

FET stands for Field-Effect Transistor, and it is a type of semiconductor device that is used as a switch or an amplifier in electronic circuits. FETs are three-terminal devices, with a source, a drain, and a gate.

The operation of an FET is based on the control of the flow of charge carriers (electrons or holes) by an electric field, rather than by the injection of charge carriers, as is the case with bipolar transistors.

There are two main types of FETs: the junction FET (JFET) and the metal-oxide-semiconductor FET (MOSFET).

In a JFET, a reverse-biased PN junction is used to create a depletion region that forms a channel between the source and drain terminals. The width of the channel is controlled by the voltage applied to the gate terminal, which modulates the width of the depletion region and hence the conductivity of the channel.

JFETs are typically used in low-noise amplifier circuits, as they have a very low input capacitance and a high input impedance.

In a MOSFET, an oxide layer is used to separate the gate from the channel region.

The oxide layer acts as an insulator, and the gate terminal is used to create an electric field that controls the conductivity of the channel.

MOSFETs are widely used in digital and analog circuits, as they have a high input impedance, a low output impedance, and a fast switching speed.

FETs have a number of advantages over other types of transistors, including a high input impedance, a low power consumption, and a high switching speed.

They are used in a wide range of applications, including in amplifiers, oscillators, switches, and voltage regulators, as well as in digital circuits such as logic gates and memory cells.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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Manufacturer	Part #	Datasheet	Description
Leshan Radio Company	LBSS8402DW1T1G	649Kb/9P	FETs and Diodes
Panasonic Semiconductor	2SK0665	79Kb/3P	Silicon MOS FETs
NXP Semiconductors	PMBF4391	40Kb/7P	N-channel FETs April 1995
	BSR56	37Kb/6P	N-channel FETs April 1991
	BF908	87Kb/8P	Dual-gate MOS-FETs 1996 Jul 30
	BUK3F00-50WDXX	264Kb/52P	Controller for TrenchPLUS FETs Rev. 04-4 September 2008
Mimix Broadband	CFB0101	435Kb/2P	General Purpose GaAs FETs
List of Unclassifed Man...	CFA0103	469Kb/2P	LOW-NOISE GaAs FETS
Quanzhou Jinmei Electro...	BF861	91Kb/12P	N-channel junction FETs
NXP Semiconductors	PMBFJ108	36Kb/6P	N-channel junction FETs April 1995
	BF861A	102Kb/12P	N-channel junction FETs 1997 Sep 04
	BF908	258Kb/9P	Dual-gate MOS-FETs Rev. 03-14 November 2007
Mimix Broadband	CFA0101	674Kb/2P	General Purpose GaAs FETs
	CFA0103	981Kb/2P	Low Noise GaAs FETs
	CFB0103	654Kb/2P	Low Noise GaAs FETs
Quanzhou Jinmei Electro...	BF861_2015	91Kb/12P	N-channel junction FETs
	BF1100_2015	115Kb/14P	Dual-gate MOS-FETs
	BF1100	115Kb/14P	Dual-gate MOS-FETs
NXP Semiconductors	BF1100	311Kb/15P	Dual-gate MOS-FETs Rev. 02-13 November 2007
Mimix Broadband	CFC0301	531Kb/2P	Medium Power GaAs FETs

FETS Datasheet, PDF

What is FETS

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