| Manufacturer | Part # | Datasheet | Description |

Shanghai Leiditech Elec...
|
B5817W |
790Kb/3P |
Low stored change,majority carrier conduction. |

Gaomi Xinghe Electronic...
|
B5817W |
300Kb/3P |
Low stored change,majority carrier conduction. |

Shanghai Leiditech Elec...
|
RB160M-30 |
587Kb/3P |
Low stored change,majority carrier conduction. |

SHIKUES Electronics
|
B5817WS |
2Mb/4P |
Extremely low, Low stored change, Majority carrier conduction |
| BAL99 |
657Kb/2P |
Extremely low, Low stored change, Majority carrier conduction |

Shenzhen Luguang Electr...
|
SS345FL |
1Mb/2P |
Metal silicon junction, majority carrier conduction |

Kersemi Electronic Co.,...
|
MBR10H60 |
1Mb/3P |
Metal silicon junction, majority carrier conduction |
| MBR1520CT |
477Kb/2P |
Meatl of Silicon Rectifier, Majority Conducton |

Gaomi Xinghe Electronic...
|
MBR1030 |
377Kb/2P |
Metal of silicon rectifier , majority carrier conduction |

Motorola, Inc
|
MC14530B |
220Kb/7P |
DUAL 5-INPUT MAJORITY LOGIC GATE |

Taiwan Semiconductor Co...
|
MBR20200PT |
103Kb/2P |
Metal silicon junction, majority carrier conduction |

Sangdest Microelectroni...
|
1N5817W |
135Kb/4P |
Metal silicon junction, majority carrier conduction |
| SS3L45 |
150Kb/5P |
Metal to sillicon rectifier, majority carrier conduction |

Guangdong Youtai Semico...
|
SS52 |
198Kb/3P |
Metal to silicon rectifier, majority carrier conduction. |

SHIKUES Electronics
|
MBR30100C-ST |
482Kb/3P |
Trench MOS schottky technology, Low stored charge Majority Carrier Conduction |

Abracon Corporation
|
PAS-BC3WK |
1Mb/3P |
The majority of electronic designs have some form of timing associated with them 03.12.12 |

Omron Electronics LLC
|
XS2F-D421-D80-F |
147Kb/9P |
The vast majority of Omron ECB products use the date code as shown in Method A (next slide). |

List of Unclassifed Man...
|
600111FUL-0000 |
65Kb/1P |
compact unit allows it to be used with the majority of detectors to provide convenient remote indication. |
| OZ9938 |
352Kb/12P |
Change Summary |
| OZ9910 |
375Kb/17P |
Change Summary |