| Manufacturer | Part # | Datasheet | Description |

IXYS Corporation
|
IXBOD1-12 |
252Kb/8P |
Breakover Diodes |

NXP Semiconductors
|
BR211SM |
32Kb/6P |
Breakover diodes August 1996 Rev 1.100 |

IXYS Corporation
|
IXBOD1-24RD |
258Kb/8P |
Breakover Diodes |
| IXBOD1-13RD |
258Kb/8P |
Breakover Diodes |

NXP Semiconductors
|
BR211 |
32Kb/7P |
Breakover diodes August 1996 Rev 1.200 |
| BRS212 |
32Kb/6P |
Breakover diodes January 1997 Rev 1.000 |

IXYS Corporation
|
IXBOD1-28RD |
258Kb/8P |
Breakover Diodes |
| IXBOD1-12RD |
258Kb/8P |
Breakover Diodes |
| IXBOD1-40R |
258Kb/8P |
Breakover Diodes |
| IXBOD1 |
158Kb/5P |
Breakover Diode Gen |

List of Unclassifed Man...
|
CR0300 |
306Kb/9P |
Thyristors (SiBOD Breakover Devices) |

IXYS Corporation
|
IXBOD2 |
226Kb/4P |
Breakover Diode Gen |

Microdiode Semiconducto...
|
DB3 |
73Kb/2P |
BIDIRECTIONAL TRIGGER DIODE Low breakover current |

Kersemi Electronic Co.,...
|
DB3TG |
395Kb/4P |
Breakover voltage range: 30 to 34V |

Jinan Jing Heng Electro...
|
SIDAC |
98Kb/5P |
Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts |
| DB105A |
171Kb/7P |
Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts c |

Jinan Jingheng (Group) ...
|
SIDAC |
98Kb/5P |
Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts c |

Sangdest Microelectroni...
|
1N5225 |
205Kb/5P |
ZENER DIODES Diodes |