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13.6 Datasheet, PDF |
| Searched Keyword : '13.6' - Total: 14 (1/1) Pages |
| Manufacturer | Part # | Datasheet | Description |
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Infineon Technologies A... |
BGA7L1BN6 | 1Mb/14P |
Insertion power gain: 13.6 dB Revision 3.1, 2017-03-03 |
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List of Unclassifed Man... |
PP506 | 11Kb/1P |
Power Supply - 13.6 Vdc at 1.6 Amps |
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Marki Microwave |
MFB-1445SM | 392Kb/7P |
Passive MMIC 13.6-15.1 GHz Bandpass Filter |
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ON Semiconductor |
NVTYS013N10MCL | 307Kb/4P |
MOSFET - Power, Single N-Channel 100 V, 13.6 m, 52 A January, 2021 - Rev. P0 |
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Solid States Devices, I... |
STA3KA13.6JE | 61Kb/2P |
3,000 WATTS PEAK PULSE POWER 13.6 - 800 VOLTS UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
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Hittite Microwave Corpo... |
HMC531LP5 | 379Kb/8P |
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 13.6 - 14.9 GHz |
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Nexperia B.V. All right... |
PSMN014-40HLD | 287Kb/12P |
N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology 26 September 2022 |
| PSMN013-30MLC | 299Kb/14P |
N-channel 30 V 13.6 m廓 logic level MOSFET in LFPAK33 using NextPower Technology | |
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NXP Semiconductors |
PSMN013-30YLC | 300Kb/15P |
N-channel 30 V 13.6 m廓 logic level MOSFET in LFPAK using NextPower technology Rev. 3-24 October 2011 |
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Nexperia B.V. All right... |
PSMN013-30YLC | 908Kb/15P |
N-channel 30 V 13.6 m廓 logic level MOSFET in LFPAK using NextPower technology |
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NXP Semiconductors |
PSMN013-30MLC | 370Kb/14P |
N-channel 30 V 13.6 m廓 logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4-15 June 2012 |
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Lite-On Technology Corp... |
LTP-3786G | 139Kb/5P |
The LTP-3786G is a 0.54 inch (13.6 mm) digit height dual digit seven-segment display |
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Tripp Lite. All Rights ... |
SRSHELF2P1UTM | 504Kb/2P |
SmartRack 1U Cantilever Toolless Mount Fixed Shelf (30 lb/13.6 kg capacity; 12 in./305 mm depth) |
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Ampleon Netherlands B.V... |
BLP9LA25S | 2Mb/23P |
General description This 13.6 V 25 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 941 MHz. Rev. 2 ??16 July 2021 |
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